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two phase hall effect latch with fg output ah211 1 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet general description the ah211 is an integrated hall sensor with output driver and frequency generator designed for electronic commutation of brush-less dc motor applications. the device includes an on-chip hall sensor for magnetic sensing, an amplifier that amplifies the hall voltage, a schmitt trigger to provide switching hysteresis for noise rejection, a temperat ure compensation circuit to compensate the temperature drift of hall sensitivity, two complementary open-coll ector drivers for sinking large load current. it also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits. place the device in a variable magnetic field, while the magnetic flux density is larger than threshold bop, do will be turned on (low) and dob (and fg) will be turned off (high). this output state is held till the mag- netic flux density reversal falls below brp causing do to be turned off (high) and dob (and fg) turned on (low). ah211 is available in to-94 (sip-4l) package. features on-chip hall sensor 3.5v to 16v supply voltage 400ma (avg) output sink current -20 o c to 85 o c operating temperature built-in fg output low profile to-94 (sip-4l) package esd rating: 600v (machine model) applications dual-coil brushless dc motor dual-coil brushless dc fan revolution counting speed measurement figure 1. package type of ah211 to-94
two phase hall effect latch with fg output ah211 2 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of ah211 (front view) (to-94) pin configuration z4 package gnd dob do fg pin description pin number pin name function 1 fg frequency generation 2 do output 1 3 dob output 2 4 gnd ground 1 2 3 4
two phase hall effect latch with fg output ah211 3 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet functional block diagram figure 3. functional block diagram of ah211 package temperature range part number marking id packing type lead free green lead free green to-94 -20 to 85 o c AH211Z4-AE1 ah211z4-ag1 ah211 ah211z4-g1 bulk ah211z4-be1 ah211z4-bg1 ah211 ah211z4-g1 bulk ordering information circuit type package z4: to-94 (sip-4l) e1: lead free ah211 - magnetic characteristics a: 5 to 60 gauss b: 90 gauss regulator temperature compensation hall sensor amplifier schmitt trigger output driver do dob 2 3 gnd 4 fg 1 bcd semiconductor's pb-free products, as de signated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green package. g1: green
two phase hall effect latch with fg output ah211 4 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet parameter symbol value unit supply voltage v cc 20 v magnetic flux densit y b unlimited gauss output current continuous i o 400 ma hold 600 ma peak (start up) 800 ma fg voltage v fg 30 v fg current i fg 20 ma power dissipation p d 550 mw thermal resistance die to atmosphere ja 227 o c/w die to package case jc 49 o c/w storage temperature t stg -50 to 150 o c esd (machine model) 600 v esd (human body model) 6000 v note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. "absolut e maximum ratings" for exte nded period may affect device reliability. parameter symbol min max unit supply voltage v cc 3.5 16 v ambient temperature t a -20 85 o c recommended operating conditions absolute maximum ratings (note 1) (t a =25 o c) (t a =25 o c)
5 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet two phase hall effect latch with fg output ah211 parameter symbol test condition min typ max unit output saturation voltage v sat b>150gauss, v cc =3.5v, v dob =v cc , i do =100ma (or b<-150gauss, v cc =3.5v, v do =v cc , i dob =100ma) 1.1 v b>150gauss, v dob =v cc , i do =400ma (or b<-150gauss, v do =v cc , i dob =400ma) 1.05 1.3 v fg saturation voltage v satf b<-150gauss, v do =v cc , i fg =20ma 0.35 0.6 v fg leakage current i olf b>150gauss, v dob =v cc , v fg =16v 0.1 10 a supply current i cc b>150gauss, v dob =v cc , (or b<-150gauss, v do =v cc ) 48ma output rise time tr r l =1k ? , c l =10pf 3.0 10 s output fall time tf r l =1k ? , c l =10pf 0.3 1.0 s switch time differential ? tr l =1k ? , c l =10pf 3.0 10 s output zener breakdown voltage v z 31 v (t a =25 o c, v cc =14v, unless otherwise specified) electrical characteristics parameter symbol grade min typ max unit operating point b op a 5 30 60 gauss b90gauss releasing point b rp a-60-30-5gauss b -90 gauss hysteresis b hys 60 gauss magnetic characteristics (t a =25 o c)
two phase hall effect latch with fg output ah211 6 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet figure 4. basic test circuit magnetic characteristics (continued) n s marking side figure 5. v do vs. magnetic flux density figure 6. v dob vs. magnetic flux density -40 -20 0 20 40 2 4 6 8 10 12 14 16 dob (v) v sat v cc magnetic flux density b (gauss) -40 -20 0 20 40 2 4 6 8 10 12 14 16 do (v) v sat v cc magnetic flux density b (gauss) ah211 fg do dob gnd 12 3 4 +14v do (v out1 ) dob (v out2 ) r2 r3 1k ? 1k ? c2 c3 10pf 10pf r1 1k ? c1 10pf fg (v fg )
7 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet two phase hall effect latch with fg output ah211 typical performance characteristics figure 9. b op /b rp /b hys vs. ambient temperature figure 8. b op /b rp /b hys vs. v cc figure 10. p d vs. ambient temperature figure 7. i cc vs. v cc -25 0 25 50 75 100 125 150 0 200 400 600 800 p d (mw) t a ( o c) -20-10 0 1020304050607080 -60 -40 -20 0 20 40 60 80 b op /b rp /b hys (gauss) t a ( o c) b op b rp b hys 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -60 -40 -20 0 20 40 60 80 b op /b rp /b hys (gs) v cc (v) b op b rp b hys 4 6 8 1012141618 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 t a =25 o c i cc (ma) v cc (v) i pin2 i pin3
two phase hall effect latch with fg output ah211 8 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet typical performance characteristics (continued) figure 11. supply current vs. ambient temperature figure 12. v sat vs. ambient temperature -40-20 0 20406080 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v cc =14v i cc (ma) t a ( o c) i pin2 i pin3 -40-20 0 20406080 900 950 1000 1050 1100 v pin2 v pin3 v sat (mv) t a ( o c) v cc =14v i out =400ma 0 5 10 15 20 0 50 100 150 200 250 v satf (mv) i out (ma) -40 -20 0 20 40 60 80 220 240 260 280 300 320 v satf (mv) t a ( o c) v pin2 =14v i out =20ma figure 13. fg saturation voltage vs. figure 14. fg saturation voltage vs. ambient temperature output current
two phase hall effect latch with fg output ah211 9 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet application information figure 15 is the typical application circuit for ah211. usually, there are three wires for fan connection: the red is input of power supply; the yellow is the output of fg; the black is the ground. r1 is an external pull-up resister for the use of measuring fg signal from fan. the value of r1 could be decided by the transistor saturation voltage (v on ), sink current (i fg ), and pull- up voltage (v dd ). the calculati on formula is: r1=(v dd -v on ) / i fg for example: v dd =5v for ttl level. if saturation voltage is 0.6v (ic specification) i fg =20ma ( 20ma) , then r1=220 ? ; if saturation voltage is 0.1v, i fg =1ma (=<20ma) , the value of r1=4.9k ? according ah211's specification, if v dd =5v, r1 must be larger than 220 ? . d1 is the reverse protection diode. if the red and black wires reversely connected, th e current will flow from the ground via ic and coils l1 and l2 to power supply. under such circumstances, the ic and coils are easy to be burned out. therefore, the reverse protection diode d1is necessary. however, d1 will also cause an extra voltage drop on the supply voltage. c1 is a capacitor to reduce the ripple noise caused by the transient of the output stages. the amplitude of the ripple noise depends on the coil impedance and its characteristics. ah211 fg do dob gnd 12 3 4 coil1 coil2 c1 d1 r1 1k ? v cc (red wire) v dd fg (yellow wire) gnd (black wire) figure 15. ah211 typical application circuit
two phase hall effect latch with fg output ah211 10 feb. 2010 rev. 1. 7 bcd semiconductor manufacturing limited data sheet mechanical dimensions unit: mm(inch) to-94 package sensor location 3.780(0.149) 4.080(0.161) 0.500(0.020) 0.700(0.028) 1.520(0.059) 1.720(0.067) 0.700(0.028) 0.900(0.035) 0.360(0.014) 0.510(0.020) 4.980(0.196) 5.280(0.208) 1.250(0.050) 1.850(0.073) 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 15.300(0.602) 1.270(0.050) typ 3.710(0.146) 3.910(0.154) 45 typ 3.450(0.136) 3.750(0.148) 14.000(0.550)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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